Determination Of Doping Profiles By Means of SIMS Analysis
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19
To determine the doping profile in surface layers of silicon wafers, an etch barrier is produced at such depth below one wafer surface that the doped area to be tested is located between that surface and the etch barrier. Subsequently, the wafer is thinned from its other surface to the etch barrier, and SIMS (secondary ion mass spectrometry) analysis is started from the etch barrier.