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In order for the size and shape of an ion implant to be measurable optically, it must first be delineated. The following process produces a physical delineation of an n type implant in p type silicon.
English (United States)
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Delineation of Ion Implanted Semiconductor Devices For Physical
In order for the size and shape of an ion implant to be measurable optically,
it must first be delineated. The following process produces a physical delineation
of an n type implant in p type silicon.
With the use of stock solution 1 (see below), delineation appears in the form
of a ridge completely bordering the implant. With the use of stock solution 2 or 3,
a copper stain covers the implant.
Additionally, color definition of n, n+ and p type areas is provided by solutions
2 and 3. For example, an n type diffusion remains a silicon color, while the
associated n+ lateral diffusion becomes colored by a coating of copper and is
also in the form of a ridge. The adjacent p type silicon is transformed to a
distinctive bright blue.
A freshly formulated delineation solution (described below) is applied to a
freshly exposed, very smooth, silicon surface after both the solution and the
silicon have stabilized at room temperature. Light of the proper spectrum and
intensity may be provided, for example, by a Bausch and Lomb microscope light
source, Catalog No. 31-35-30, containing a General Electric No. 1430X tungsten
bulb, at the highest power switch setting. The beam is directed essentially
perpendicular to the silicon surface from a sample-to-light source objective lens
distance of about 3.5 inches. Exposure time and chemical action are stopped
after about 8 seconds by removing the sample from t...