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Floating Gate Device With Dual Control Gates

IP.com Disclosure Number: IPCOM000066149D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Larsen, TA Ning, TH Osburn, CM Yu, HN [+details]

Abstract

A dual gate MNOS device is described in reference (1) which features channel hot electron injection into one gate by applying positive bias voltages to both gates and the drain. This injection process is more efficient than the channel hot electron in regular (single gate) devices. Furthermore, the injection process is determined by the applied voltages only, and is independent of the channel length (source drain separation). Further details of the channel hot electron injection process in dual gate devices is set forth in reference (2).