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Read Mostly Storage Element Based on PunchThrough Phenomena in Josephson Devices

IP.com Disclosure Number: IPCOM000066161D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Anacker, W [+details]

Abstract

This article relates to a read-mostly storage element which utilizes the "punch-through" effect in Josephson devices to form a special storage circuit which remembers its "1" or "0" state as long as nominal AC is applied to it. The circuit provides positive and negative output current polarities depending on which polarity of the applied AC power cycle is present.