Browse Prior Art Database

Double Polysilicon, Double Diffused, Charge Coupled Device Dynamic Memory Cell

IP.com Disclosure Number: IPCOM000066245D
Original Publication Date: 1979-Feb-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Fortino, A Vogl, NG [+details]

Abstract

This article describes a semiconductor process which provides a self aligned structure having significantly reduced bit line capacitance.