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Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
This article describes a semiconductor process which provides a self aligned
structure having significantly reduced bit line capacitance.
The process includes processing a semiconductor wafer 10 through a
standard semi-recessed oxidation (semi-ROX) isolation process to provide thick
silicon dioxide regions 12. After the ROX mask is removed, a thin gate oxide 14
is grown, followed by a first polycrystalline layer 16. If required, a shallow ion
implant may be introduced after the gate oxide growth for surface tailoring, as
shown at 18.
Polysilicon layer 16 and oxide layer 14 are then selectively removed from the
center of the isolated ROX-defined double-cell areas bounded by thick oxide
region 12. A double diffusion or ion implant is performed in the exposed
substrate to provide a p+ region 20 and an n+ region 22 to provide charge-
coupled device memory cells in which the n+ region 22 acts as a drain, the
portions of p+ region 20 between the n+ region and regions 18 act as channels,
and the regions 18 under polysilicon leyer 16 act as charge storage regions.
Next, a layer 24 of dielectric, such as oxidized polysilion or deposited oxide,
is provided to isolate polysilicon line 16. A contact hole is etched over region 22
to enable a second polysilicon line 26 to contact region 22. A second dielectric
layer 28 is provided to isolate polysilicon line 26. Finally, contact holes are