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Write And Read Scheme For Photochemical Hole Burning Storage Systems

IP.com Disclosure Number: IPCOM000066345D
Original Publication Date: 1979-Feb-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Burland, DM Carmona, F Castro, G Haarer, D Macfarlane, RM [+details]

Abstract

Nondestructive reading of photochemical hole burning memory systems is accomplished by writing with two photons and reading with one photon. A material system is used which has two electronic states, I and II, where state I is photoreactive, for example, a higher excited singlet state, and state II is nonreactive, for example, a low lying singlet state.