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This article describes an integrated anemometer structure with integrated sensor and control circuits on a chip by using porous silicon dioxide (SiO(2)) technology.
English (United States)
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100% of the total text.
Page 1 of 2
Integrated Anemometer Structure
This article describes an integrated anemometer structure with integrated
sensor and control circuits on a chip by using porous silicon dioxide (SiO(2))
The circuitry shown in Fig. 1 is for a device for precision measurement of gas
or liquid flow. This consists of a sensor and a differential amplifier. A
conventional anemometer using a discrete sensor and amplifier is shown in Fig. 2.
An improved structure using integrated structure on a silicon chip is shown in
Fig. 3. The sensor is formed on the chip and isolated thermally. Porous SiO(2)
technology is usable for good thermal isolation because it has low thermal
conductivity and low heat capacity. The amplifier may be formed by conventional
silicon technology. This structure can be made by batch-processing; therefore,
significant cost reduction is expected. This structure is also applicable to a
strain gauge sensor.
Page 2 of 2
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