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For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
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A process is described whereby the adverse effects of the present epitaxial process upon the highly doped subcollector region (sometimes referred to as winging or autodoping) is minimized or eliminated.
English (United States)
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A process is described whereby the adverse effects of the present epitaxial
process upon the highly doped subcollector region (sometimes referred to as
winging or autodoping) is minimized or eliminated.
In the present bipolar device, the epitaxial layer is formed at high
temperatures (approximately 1100 degrees C). During the initial phase of
epitaxial growth, the subcollector dopant material outdiffuses and will
contaminate the carrier gas in the immediate vicinity of the subcollector area, and
causes a subsequent decrease in the breakdown voltage from collector to
It is proposed that a thin (approximately 2000
film of epitaxy be formed (to cover the entire wafer) at much lower temperatures
to provide a "cap" to the highly doped areas of the wafer. This can be
accomplished by an ion beam direct deposition tool. Taking into consideration
the proper manner of surface treatment prior to and following the ion beam
deposition, the normal high temperature epi growth may now proceed. The "cap"
should be of sufficient thickness that the diffusion of the subcollector impurity
never reaches the epitaxial surface.
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