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Elimination of Aluminum Hydride Formation During RIE Of Quartz With CF(4)+H(2)

IP.com Disclosure Number: IPCOM000066474D
Original Publication Date: 1979-Mar-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Chang, K Ephrath, L Hoeg, AJ Joseph, R [+details]

Abstract

In etching via holes in quartz using RIE (reactive ion etching) with with CF(4) plus H(2) an aluminum hydride residue is avoided when etching down to an Al Cu surface by adding a metal to the top of the Al Cu which does not form a hydride. For example, a layer of Cr is used on top of the Al . Cu A single photoresist structure is put on top of the quartz, and the structure is hardened and baked before being reactive ion etched in a mixture of CF(4) plus H(2). The mixture produces a high etch rate ratio between quartz and photoresist and permits etching the quartz completely to the metal interface with good dimensional control and without the formation of an aluminum hydride residue.