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Method For Measuring The Surface Concentration of Thin Epitaxial Layer

IP.com Disclosure Number: IPCOM000066495D
Original Publication Date: 1979-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Bronchard, JP Cholley, JF Gaillard, J Leroy, B [+details]

Abstract

In many epitaxial reactors when a thin epitaxial layer is grown above a semiconductor substrate provided with arsenic, heavily doped buried subcollector regions, it is very difficult to measure the arsenic surface concentration by resistivity measuring techniques.