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Read And Write Circuits For A Harper Cell Memory

IP.com Disclosure Number: IPCOM000066497D
Original Publication Date: 1979-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Beranger, H Marzin, C Omet, D Peter, JL [+details]

Abstract

The read and write circuits shown above are to be used in a Harper cell memory wherein the selected cells are powered between supply voltages equal to the ground and VEE and the nonselected cells are powered between VBB and VEE, with VBB Less Than VEE. These circuits take advantage of the existing power supply VBB for replacing the generally used reference voltaRes.