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Nickel Dithiene Complexes

IP.com Disclosure Number: IPCOM000066552D
Original Publication Date: 1979-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Lane, RW Mayerle, JJ Mueller-Westerhoff, UT Nazzal, A [+details]

Abstract

The demand for materials with intense absorption in the 1.5-to-2.0- micron range for laser applications has prompted us to consider the factors involved in shifting the position of the known intense electronic transition in dithiene complexes to even lower energies. Attaching substituted phenyl groups to the dithiene system is successful up to a limit of about 1.4 microns. Further shifts cannot be obtained in this way because the ligand cannot be completely coplanar, due to the steric interference of the hydrogens in the 2 position of the phenyl groups.