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Low Temperature Process For HgTe Thin Films

IP.com Disclosure Number: IPCOM000066565D
Original Publication Date: 1979-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Feng, JS [+details]

Abstract

This article describes a process for fabricating a thin HgTe film Hall effect sensor for use where temperatures do not exceed 300 degrees C. Films produced by this process have low resistivity and high Hall mobilities.