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Passivating Process For The Thin Gold Layer On Silicon

IP.com Disclosure Number: IPCOM000066592D
Original Publication Date: 1979-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Chang, CA [+details]

Abstract

Metal diffusion in and passivation of thin gold layers can be controlled by using an ambient of Co or H(2). The Co or H(2) ambient affects the surface potential. The outdiffusion of Cr and Co in Au is reduced in an ambient of Co or H(2) , with Co being the more effective.