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Laser Annealing And Diffusion Definition Using Metal Layers

IP.com Disclosure Number: IPCOM000066614D
Original Publication Date: 1979-Mar-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Hovel, HJ [+details]

Abstract

The technique of semiconductor processing with external energy sources, such as E-beams, ion implanters or lasers can be enhanced by using a photolithographically produced metal mask which reflects the energy where not needed and provides the desired shape outline. The energy passing through the openings in the metal can diffuse impurities anneal the previously processed semiconductor, or introduce implanted ions. The use of the mask is shown in the figure.