Gettering Minority Carriers From Forward Biased Junctions With Substrate Contacts
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20
Minority carriers injected into a semiconductor substrate across a forward biased junction are known to adversely affect the performance of adjacent devices and circuits. For example, in M0S (metal oxide semiconductor) technologies, using gate dielectrics with high trapping densities, permanent threshold shifts result. Additionally, dynamic M0S memory cells can lose signal because of such injected charge. These effects can result in device failure.