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Yield Enhancement Process

IP.com Disclosure Number: IPCOM000066712D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Bhatia, HS Doney, DA Montillo, FJ [+details]

Abstract

Ion implantation damage created during base implant of a bipolar transistor process is annealed in H(2) atmosphere to improve device yield significantly. The process is as follows: