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Yield Enhancement Process Disclosure Number: IPCOM000066712D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

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Anantha, NG Bhatia, HS Doney, DA Montillo, FJ [+details]


Ion implantation damage created during base implant of a bipolar transistor process is annealed in H(2) atmosphere to improve device yield significantly. The process is as follows: