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Ion implantation damage created during base implant of a bipolar transistor process is annealed in H(2) atmosphere to improve device yield significantly. The process is as follows:
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Yield Enhancement Process
Ion implantation damage created during base implant of a bipolar transistor
process is annealed in H(2) atmosphere to improve device yield significantly.
The process is as follows:
Starting with a P- wafer 1, form N+ subcollector 2, and grow N epi 3. Mask
the structure successively, and etch deep trenches 4 and shallow trenches 5.
Preferably, the trenches are partially oxidized and then filled in with deposited
oxide 6 to yield the structure of Fig. 1.
Boron is implanted to produce base area 7 of Fig. 2. Then, the structure is
annealed at 1000 degrees C for 1/2 hour in H(2) to anneal implantation damage.
The structure is completed in a conventional manner by forming the emitter 7 and
N+ reach-through area 8 and producing the electrode contacts (not shown).
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