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Platinum Contact/Chromium Barrier Metallurgical Processing Technique By Ion Milling

IP.com Disclosure Number: IPCOM000066715D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Gartner, HM Hinderer, JJ Petvai, SI Potts, HR Schnitzel, RH [+details]

Abstract

Because MOS field-effect transistors, charge-coupled devices, and similar devices require processing treatments which will result in low charge level devices in a radiation-free environment, the ion milling system provides these necessary attributes for both depositing and removing thin films.