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This is a high alpha PNP transistor formed with conventional NPN bipolar processes. The device can also be modified to operate as a junction field-effect transistor (J-FET).
English (United States)
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High Alpha PNP Transistor OR N Channel J-FET
This is a high alpha PNP transistor formed with conventional NPN bipolar
processes. The device can also be modified to operate as a junction field-effect
Fig. 1 is a vertical profile, while Fig. 2 shows the horizontal topography of the
structure. A P isolation diffusion covers the entire area under B1 and B2, as
well as under an ion-implanted P region I. Two conventional P-type base
diffusions B1 and B2 together with the P isolation diffusion form the collector of
the PNP device. In the designated area of the N+ subcollector, the N-type
impurity dominates the P isolation and, as such, the subcollector region still
remains net N-type. The resultant PNP transistor has as its emitter the ion-
implanted region I, the base region being formed by the N-type epitaxial material
(N-EPI) into which the region I was formed, while the collector is formed by the
previously described P isolation and the P-type diffusions B1 and B2. The PNP
transistor is isolated from other devices by N/-/ epi or recessed oxide isolation
(ROI) in combination with the N+ subcollector.
Fig. 2 is a top view and, in addition to the features shown in Fig. 1, shows the
contact regions E to the N-EPI forming the base of the PNP transistors. These
contact regions are designated (E) as they are the emitter diffusions normally
employed in the NPN bipolar process. For purposes of explanation, a larger
area has been shown than is necessary. T...