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AS Doping Depth In SI Determined By SIMS Disclosure Number: IPCOM000066750D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

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Kaus, G Kempf, J Schmid, G Schmid, GE Seybold, D [+details]


Secondary Ion Mass Spectroscopy (SIMS) is a suitable and sensitive method for analyzing dopant depth profiles in semiconductors. However, for some types of atom, such as As in Si. the sensitivity of SIMS is reduced because of mass interference with other particle species.