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AS Doping Depth In SI Determined By SIMS

IP.com Disclosure Number: IPCOM000066750D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Kaus, G Kempf, J Schmid, G Schmid, GE Seybold, D [+details]

Abstract

Secondary Ion Mass Spectroscopy (SIMS) is a suitable and sensitive method for analyzing dopant depth profiles in semiconductors. However, for some types of atom, such as As in Si. the sensitivity of SIMS is reduced because of mass interference with other particle species.