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Rapid Recrystallization Of Amorphous Substance Via A Low Viscous State

IP.com Disclosure Number: IPCOM000066801D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Tsu, R [+details]

Abstract

There exists about a 30% margin for the power density for optimum laser annealing of amorphous material. For instance, the optimum power density for annealing CaAs at 530 nm wavelength and a 10 nsec. pulse is 20 MW/cm/2/, and for Si, it is 100 MW/cm/2/. Much above that, the surface exhibits a typical, melted and solidified look, i.e., puddles, and much below that, the damage is not properly annealed. The window is about 30% for both materials stated.