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Device Pad Contact To Conduction Substrate By Thermo-Migration

IP.com Disclosure Number: IPCOM000066809D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Braslau, N Woodall, JM [+details]

Abstract

In multilevel semiconductor structures, contacts to buried layers in the structure can be made by providing a heavy concentration of a dopant for a low resistance region in a small area and establishing a temperature gradient across the layers to permit the dopant to diffuse along the temperature gradient.