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New Type Of Thin Film Hybrid Crystalline Amorphous Si Solar Cell With High Light Absorption P-I-N Structure

IP.com Disclosure Number: IPCOM000066810D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Tsu, R Woodall, JM [+details]

Abstract

A P-I-N structure of amorphous silicon suitable for solar cell applications may be fabricated by doping amorphous silicon with hydrogen to produce a direct bandgap and using a laser to fuse and anneal an aluminum ohmic contact.