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Asymmetric Semiconductor Heterojunction Hot Electron Transistor

IP.com Disclosure Number: IPCOM000066811D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Chang, CA Esaki, L Nathan, MI [+details]

Abstract

The current gain of a hot electron transistor with a degenerate semiconductor base can be improved by making the collector of the transistor out of a semiconductor with an electron affinity larger than that of the material of the emitter but smaller than that of the base. Two collector materials that satisfy these criteria in a structure where the emitter is n-GaSb and the base is degenerate n-InAs are InSb(0.3)P(0.7) and (InSb)(0.48) (GaAs)(0.52)