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Hetero-Tunnel Diode

IP.com Disclosure Number: IPCOM000066812D
Original Publication Date: 1979-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Esaki, L Sai-Halasz, GA [+details]

Abstract

Tunnel diodes may be fabricated based on the unique bandedge lineup configuration at the InAs-GaSb heterojunction interface, which is such that the InAs conduction-band (CB) edge lies about 150 meV below the GaSb valence-band (VB) edge. As GaAs is alloyed into InAs or GaSb, the bandedge lineup varies, as shown in the same figure. In an nInAs-pGaSb heterojunction, electrons freely pass from the InAs CB to the GaSb VB, and the junction is ohmic.