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Built-Up Greensheet For Compound Wafer

IP.com Disclosure Number: IPCOM000066867D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Edmonds, HD Markovits, G [+details]

Abstract

Crystalline semiconductor wafers of high structural and electrical qualities, which are bonded to a backing layer for mechanical strength, are formed by placing a sliced wafer in a mold having a recess depth equal to the wafer thickness plus the desired backing thickness. The recess is then filled with a suitable backing material, such as silicon powder in a fugitive resin binder, and leveled with a doctor blade. The system is then heated at a sufficient temperature to solidify the slurry. The wafer/backing system is then placed in a second mold of a suitable depth to provide a backing layer on the other face of the wafer, and the process is repeated. The compound structure is then sliced in the plane of the wafer at the midpoint of the wafer to provide two thin wafers which are supported by the backing layer.