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Reduction Of Capacitive Coupling Between Adjacent Dielectrically Supported Conductors

IP.com Disclosure Number: IPCOM000066872D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Cavaliere, JR Konian, RR Lever, RF Michel, AE Weeks, WT [+details]

Abstract

First level conductors L(1), L(2) and L(3) are supported by oxide Isolation 4 on doped silicon substrate 5. The second level metal is isolated by oxide 6 from L(1), L(2) and L(3).