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Fabrication Process For Shottky Barrier Diodes

IP.com Disclosure Number: IPCOM000066873D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Nagarajan, A Sharif, AU [+details]

Abstract

Leaky Schottky barrier diodes affect the noise tolerance and stability in circuits using Schottky barrier diodes at low currents, such as in random-access memory cells. The cause of these leakages is illustrated in Fig. 1 as localized N+ regions in the Schottky barrier diode areas arising from emitter diffusions through randomly-occurring pinholes in the insulator 3 overlying these areas. This results in undesired ohmic contacts rather than Schottky barrier contacts.