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Reduction Of Extrinsic Base Resistance By Use Of Self-Aligning Base Contact

IP.com Disclosure Number: IPCOM000066885D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Goth, GR Malaviya, SD [+details]

Abstract

The extrinsic base resistance of a vertical bipolar transistor is significantly reduced by the use of a process to define a base contact which is self-aligned to the emitter.