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Mask-Independent Short Channel MOS

IP.com Disclosure Number: IPCOM000066889D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Antipov, I [+details]

Abstract

In the MOS (metal oxide semiconductor) process, the desirable goal of obtaining short-channel devices requires the capability of producing very small images, as well as an extremely tight control of tolerances of these small images. For this reason, processes allowing mask inpursued.