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Susceptor Having A Pentagonal Design

IP.com Disclosure Number: IPCOM000066890D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Barbee, SG Gaind, AK Kozul, AA [+details]

Abstract

When chemically vapor depositing silicon nitride or silicon dioxide onto large semiconductor wafers, nonuniformity of deposition has been noted. The nonuniformity appears as a thick region of deposition near the edge of the wafer, which is close to the edge of the susceptor plate. It is due apparently to a local surplus of reacting gas due to increased gas flow near the susceptor edge, which extends at a slight angle toward the wall of the chamber. In addition, other parameters, such as nearness to sources of heat, cause different reaction rates at the susceptor edge.