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Technique For Masking A Cathode Or Substrate Surface At RF Potential

IP.com Disclosure Number: IPCOM000066958D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Lester, WC McDonough, GW [+details]

Abstract

Portions of the surface of a substrate or cathode can be masked or shielded from RF sputter etching or RF biased sputtered thin film deposition by placing a mask fabricated from a similar material onto the surface of the desired preselected portion of the cathode or substrate (Fig. 1). This can be done without affecting the cathode or substrate current density, thereby eliminating any induced effect on the process.