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High Rate Triode Plasma Etching Of Si

IP.com Disclosure Number: IPCOM000066961D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Chapman, BN Heiman, N Minkiewicz, VJ [+details]

Abstract

The plasma etch rate of silicon in a hot filament triode system is increased by increasing the target current density to more than 20 mA/cm/2/. Maintaining a discharge current of 5 A in a confined triode reactor having a gas mixture of 5 Mu m Ar plus 4 Mu mCF(4) resulted in a target current density of 49 mA/cm/2/ and an etch rate for silicon of 1.75 Mu m/minute. Etch rates of 6 to 8 Mu m/minute may be obtained with a physically realizable discharge current of 15 to 20 A.