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Method For Obtaining Large Grain Silicon Films On Amorphous Substrate

IP.com Disclosure Number: IPCOM000066983D
Original Publication Date: 1979-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Ho, PS Hwang, JCM Kuan, TS Tu, KN [+details]

Abstract

This technique is based on the observation that large grains of silicide can be formed by crystallization from an amorphous thin film of suitable composition on a glassy substrate. The composition of the amorphous layer can either be a binary phase, e.g., Pd(2)Si or Pd(3)Si, or a ternary phase, phase, such as Al(3)Pd(4)Si. In one of the experiments, amorphous layers of Pd(2)Si and Pd(3)Si, approximately 800 angstroms thick, were prepared by E-gun coevaporation of metal and silicon atoms onto SiO(2) substrates at room temperature or liquid nitrogen temperature. In the case of Pd(2)Si, (001) textured grains as large as 10 microns were formed upon heating to 300 degrees C. In the case of Pd(3)Si, (100) textured grains of comparable sizes were formed.