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Dynamic Memory Cell Layout Using Double Level Metallurgy Disclosure Number: IPCOM000067027D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

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Roberts, AL [+details]


This dynamic 4-device memory cell is fabricated in metal-gate technology and uses two-levels of interconnect metallurgy to provide a compact cell in which stability problems caused by the beta ratio of the active, cross-coupled devices to the input/output devices are capable of being optimized for minimum cell size.