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This is a technique for removing organic contaminants from lift-off structures in Schottky barrier diode fabrication.
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Tantalum Schottky Barrier Diodes
This is a technique for removing organic contaminants from lift-off structures
in Schottky barrier diode fabrication.
In the fabrication of Schottky barrier diodes, large increases of hydrocarbon
peaks have been noticed in residual gas analysis spectra during tantalum
evaporation. Similarly, plasma chromatographic analysis has revealed the
presence of casting solvents, such as N-methyl pyrroldone, on specimens of the
standard lift off structure. This organic contamination plays a role in the variation
in the performance of tantalum talum Schottky barrier diodes.
The aforementioned problem can be solved by a post-reactive ion etch
vacuum bake. In this way, removal of the residual solvents is facilitated through
the exposed sidewalls of the photoresist structure. In contrast, outgassing in the
standard baking scheme, which takes place prior to pattern formation, is retarded
by the multiple structural layers. Also, no high temperature baking is presently
done after imaging resist application during which the structure absorbs the
additional amounts of solvents, resulting in the above-described contamination to
the metal-silicon interface.