Browse Prior Art Database

Reactive Species Generation for Plasma Etching By Ion Bombardment of a Suitable Compound

IP.com Disclosure Number: IPCOM000067058D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Desilets, BH Gunther, TA Koste, WW [+details]

Abstract

If a fluoro-compound such as TEFLON* (C(2)F(6)) or KYNAR**, which is a fluoridene compound, or other fluorine compounds are bombarded by a gas, which may be inert, such as Argon, or not inert, such as oxygen, the process releases fluorine species which then react with materials placed in the volume containing the gas. In a plasma reactor the gas is excited and accelerated by the RF field. The reactions which take place release fluorinated species, such as: (CF(2))(n) + Ar approaches Ar + C + F (CF(2))(n) Ar + SiO(2) approaches CO(2) + Ar + SiF(4) The CO(2) and the SiF(4) molecules are gaseous, and thus the process results in etching the SiO(2).