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Field Stitching Method Disclosure Number: IPCOM000067059D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

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Davis, DE [+details]


Integrated circuit manufacturers are presently using electron (E)-beam lithography tools to write patterns on masks and semiconductor wafers. Limitations exist as to the maximum field size over which a pattern can be written using these tools. The limitations are due to the increase in the edge slope of the individual E-beam spots as the deflection range is increased. These increases result in poor image quality of the written pattern. One solution to the problem is to reduce the beam current density, but this is undesirable as it reduces the throughput of the tool.