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Retention time in a charge-coupled device (CCD) cell is improved by reducing the effect of thermally generated electrons.
English (United States)
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Charge Coupled Device With Improved Retention Time
Retention time in a charge-coupled device (CCD) cell is improved by
reducing the effect of thermally generated electrons.
As shown in the figure, a CCD is fabricated by forming a P type epi on an N
type substrate. Polysilicon electrodes (P1 and P2) are then formed on top of the
surface, suitably separated by oxide layers. Potential wells are formed by the
bias voltages applied to the polysilicon electrodes. Full and empty wells are
illustrated in the figure, where it is noted that the depletion region for an empty
well extends below the PN junction whereas the depletion region for a full well
does not. Thermally generated electrons will be attracted to the empty well
which will eventually fill, thereby indicating a binary 1 instead of a binary 0.
By applying a more negative potential to the P type epitaxial region (e.g., -2
volts) and a more positive potential (e.g., ground) to the N type substrate, the
depletion region is formed on both sides of the PN junction. This reverse biased
PN junction causes thermally generated electrons to be collected in the substrate
instead of filling the empty wells.
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