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A field-effect transistor can withstand a high voltage at its drain electrode when the drain region is surrounded by the channel region.
English (United States)
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High Voltage Field Effect Transistor
A field-effect transistor can withstand a high voltage at its drain electrode
when the drain region is surrounded by the channel region.
The device illustrated above is a high voltage field-effect transistor. The
source region 10 is contacted by a source contact 12. The drain region 14 is
contacted by a drain contact 16. The polysilicon gate extends over thin oxide in
the area designated by reference numeral 20 and over thick oxide in the area
designated by 22. The polysilicon gate electrode contact is not shown.
The enclosed device in which the drain contact is surrounded by the channel
region can be fabricated in a number of configurations depending on the desired
size of the ultimate device. For example, the source diffusion can surround the
channel region in a U-shape or a modified UU-shape. The resultant high voltage
field-effect transistor is useful in various applications, for example, in the
fabrication of bootstrap devices which are periodically subjected to voltages
higher than the supply potential.
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