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High Voltage Field Effect Transistor

IP.com Disclosure Number: IPCOM000067070D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Baran, AS Dockerty, RC O'Rourke, GD [+details]

Abstract

A field-effect transistor can withstand a high voltage at its drain electrode when the drain region is surrounded by the channel region.