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Integrated Static SCR Memory Cell

IP.com Disclosure Number: IPCOM000067071D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Farley, RT Varadarajan, HD [+details]

Abstract

Typically, a random-access memory is designed using two cross-coupled transistors, with associated load and cell access devices. There has been a significant amount of effort in recent years to integrate the load and access devices into the cross-coupled transistor structure. In the concept presented here, the cell is further simplified to the point where only one completely integrated structure is required for storage. The only other device needed to complete the memory cell is a simple Schottky diode.