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Single Step Anneal For Thin Film Transistors

IP.com Disclosure Number: IPCOM000067171D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Burr, P Chase, BD Huntley, FA Morgan, WM [+details]

Abstract

An inverted thin film transistor has the structure shown in the drawing. The conductance of a CdSe channel 1, between source and drain electrodes 2 and 3, is modulated by an insulator gate 4. Operation of the device is strongly dependent on the grain structure of the exposed surface of. the CdSe, and annealing is an important step in the manufacturing process.