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Modification of Thin Film Transistor Characteristics

IP.com Disclosure Number: IPCOM000067172D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Burr, P Chase, BD Huntley, FA Morgan, WM [+details]

Abstract

It has been found that the characteristics of thin film transistors annealed by the procedure described in the preceding article can be modified by multiple step annealing in pure nitrogen. Typically this results in an increase in mobility, a decrease in threshold and a reduction of resistance. For example, six ten-minute anneals at the temperature shown changed the characteristics of devices from mu = 29.2 V(t) = 4.8V to mu = 54.4 V(t) = 3.5V (T = 350 degrees C) mu = 18.9 V(t) = 6.2V to mu = 48.9 V(t) = 4.5V (T = 400 degrees C) (mu in units of cm/2/ /volt seconds).