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Integrated Light Emitting Devices With Silicon LSI Circuits

IP.com Disclosure Number: IPCOM000067196D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Hung, R Small, MB [+details]

Abstract

Electro-optical direct bandgap devices can be provided on silicon substrates by providing a layer with close lattice constants (such as GaP 5.44 angstroms on Si 5.42 angstroms), the lattice match of which can be improved by diluting the GaP with BP. An electro-optical direct bandgap device of any other ternary (GaAsP) or quaternary (GaInAsP) material system may be applied over the GaP. Where a laser or light-emitting diode (LED) is made in the quarternary system, the wavelength may vary from 5920 angstroms to 11000 angstroms.