Integrated Light Emitting Devices With Silicon LSI Circuits
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20
Electro-optical direct bandgap devices can be provided on silicon substrates by providing a layer with close lattice constants (such as GaP 5.44 angstroms on Si 5.42 angstroms), the lattice match of which can be improved by diluting the GaP with BP. An electro-optical direct bandgap device of any other ternary (GaAsP) or quaternary (GaInAsP) material system may be applied over the GaP. Where a laser or light-emitting diode (LED) is made in the quarternary system, the wavelength may vary from 5920 angstroms to 11000 angstroms.