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High Bandgap, High Efficiency, High Temperature Solar Cell

IP.com Disclosure Number: IPCOM000067203D
Original Publication Date: 1979-Jun-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Hodgson, RT Woodall, JM [+details]

Abstract

The surface of gallium phosphide solar cells can be passivated with aluminum phosphide in a compound Ga(x)Al(1x)P, where x is about 0.1 with a resulting bandgap of 0.3 eV.