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Method For Forming A Flat SIO(2) Topology In Multilevel Structures

IP.com Disclosure Number: IPCOM000067265D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Chang, K [+details]

Abstract

A method is described for forming flat silicon dioxide (SiO(2)) topology in multilayer structures. The technique forms planar quartz over a layer of metallurgy by techniques other than resputtering during quartz deposition. The latter method is slow, expensive and imperfect in that it forms undesirable peaks over metallurgical lands.