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Low Charge Level AlCu MOS Deposition Process Using An E-Gun Source

IP.com Disclosure Number: IPCOM000067271D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Beermunder, K Dahlke, GP Gartner, HM Pelella, AL [+details]

Abstract

The drawing shows a vacuum deposition chamber 1. A substrate heater assembly 2 is shown isolated from the supporting structure by pure quartz insulators 3. This heater provides the necessary substrate heating prior to the deposition of AlCu.