Browse Prior Art Database

Mosaic Wafers

IP.com Disclosure Number: IPCOM000067274D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Edmonds, HD Lyons, VJ Markovits, G [+details]

Abstract

Large area semiconductor substrates are formed from many smaller area substrates by the following process: (1) Slice unit substrates 1 of monocrystalline silicon as thin as saw tolerances permit from a silicon crystal. (2) Grind the device face of the substrates, if necessary (this depends upon slicing tolerances). (3) Mount unit substrates 1 in a suitable mold 2, as shown in Fig. 1. (4) Fill mold 2 with a green sheet slurry 3 of polycrystalline silicon powder contained in a fugitive organic binder, and dry. (5) Fire to drive off the binder, and sinter the powder into a hard support layer 4 (Fig. 2) which is bonded to unit substrates 1.