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Laser Annealing Method For Making Heavily Doped Emitter Transistor

IP.com Disclosure Number: IPCOM000067280D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Walsh, JL [+details]

Abstract

High performance bipolar transistors, characterized by a heavily doped emitter and small emitter-base spacing, are fabricated in accordance with the present laser-annealing method.