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Block-Off Mask Process For Self-Aligned Emitter And Base Contacts

IP.com Disclosure Number: IPCOM000067282D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Das, G [+details]

Abstract

High yield and high gain bipolar devices are fabricated by use of an all-contact block-off mask and ion-implantation process which permits separate extrinsic and intrinsic base impurity determination and facilitates self-aligned emitter and base contacts.